RGW50NL65DHRBTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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Technische Details RGW50NL65DHRBTL Rohm Semiconductor
Description: IGBT TRENCH FS 650V 57A TO-263L, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 71 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/119ns, Switching Energy: 110µJ (on), 230µJ (off), Test Condition: 400V, 12.5A, 10Ohm, 15V, Gate Charge: 73 nC, Grade: Automotive, Current - Collector (Ic) (Max): 57 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 165 W, Qualification: AEC-Q101.
Weitere Produktangebote RGW50NL65DHRBTL nach Preis ab 3.24 EUR bis 10.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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RGW50NL65DHRBTL | ROHM |
Description: ROHM - RGW50NL65DHRBTL - IGBT, AEC-Q101, 57 A, 1.5 V, 165 W, 650 V, TO-263L, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Kollektor-Emitter-Sättigungsspannung: 1.5V Verlustleistung: 165W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263L Dauerkollektorstrom: 57A Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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RGW50NL65DHRBTL | ROHM |
Description: ROHM - RGW50NL65DHRBTL - IGBT, AEC-Q101, 57 A, 1.5 V, 165 W, 650 V, TO-263L, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.5V Verlustleistung: 165W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263L Dauerkollektorstrom: 57A Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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RGW50NL65DHRBTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 57A TO-263L Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 71 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/119ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 400V, 12.5A, 10Ohm, 15V Gate Charge: 73 nC Grade: Automotive Current - Collector (Ic) (Max): 57 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 165 W Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW50NL65DHRBTL | ROHM Semiconductor |
IGBTs High-Speed Fast Switching Type, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inve |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: ROHM
Description: ROHM - RGW50NL65DHRBTL - IGBT, AEC-Q101, 57 A, 1.5 V, 165 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Kollektor-Emitter-Sättigungsspannung: 1.5V
Verlustleistung: 165W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 57A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: ROHM - RGW50NL65DHRBTL - IGBT, AEC-Q101, 57 A, 1.5 V, 165 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Kollektor-Emitter-Sättigungsspannung: 1.5V
Verlustleistung: 165W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 57A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 4.13 EUR |
| 500+ | 3.67 EUR |
| 1000+ | 3.24 EUR |
| RGW50NL65DHRBTL |
|
Hersteller: ROHM
Description: ROHM - RGW50NL65DHRBTL - IGBT, AEC-Q101, 57 A, 1.5 V, 165 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.5V
Verlustleistung: 165W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 57A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: ROHM - RGW50NL65DHRBTL - IGBT, AEC-Q101, 57 A, 1.5 V, 165 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.5V
Verlustleistung: 165W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 57A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 9.12 EUR |
| 42+ | 5.59 EUR |
| 100+ | 4.13 EUR |
| 500+ | 3.67 EUR |
| 1000+ | 3.24 EUR |
| RGW50NL65DHRBTL |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.53 EUR |
| 10+ | 6.32 EUR |
| 100+ | 4.5 EUR |
| 500+ | 3.72 EUR |
| RGW50NL65DHRBTL |
|
Hersteller: ROHM Semiconductor
IGBTs High-Speed Fast Switching Type, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inve
IGBTs High-Speed Fast Switching Type, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inve
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.45 EUR |
| 10+ | 6.85 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.3 EUR |
| 1000+ | 3.96 EUR |
| 2000+ | 3.81 EUR |