RGW60TS65DGC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.93 EUR |
10+ | 8.34 EUR |
100+ | 6.74 EUR |
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Technische Details RGW60TS65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/114ns, Switching Energy: 480µJ (on), 490µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 84 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 178 W.
Weitere Produktangebote RGW60TS65DGC11
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RGW60TS65DGC11 | Hersteller : ROHM |
Description: ROHM - RGW60TS65DGC11 - IGBT, 60 A, 1.5 V, 178 W, 650 V, TO-247N, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5 DC-Kollektorstrom: 60 Anzahl der Pins: 3 Bauform - Transistor: TO-247N Kollektor-Emitter-Spannung V(br)ceo: 650 Verlustleistung Pd: 178 Betriebstemperatur, max.: 175 Produktpalette: - SVHC: Lead (08-Jul-2021) |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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RGW60TS65DGC11 | Hersteller : ROHM Semiconductor | IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT |
Produkt ist nicht verfügbar |