RGW60TS65DGC11 Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 29+ | 5.11 EUR |
| 30+ | 4.82 EUR |
| 50+ | 4.54 EUR |
| 100+ | 4.29 EUR |
| 250+ | 4.09 EUR |
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Technische Details RGW60TS65DGC11 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 60A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 92 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/114ns, Switching Energy: 480µJ (on), 490µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 84 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 178 W.
Weitere Produktangebote RGW60TS65DGC11 nach Preis ab 3.99 EUR bis 8.66 EUR
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RGW60TS65DGC11 | Rohm Semiconductor |
 Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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RGW60TS65DGC11 | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N |
auf Bestellung 446 Stücke: Lieferzeit 14-21 Tag (e) |
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RGW60TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 60A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 178 W |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65DGC11 | ROHM Semiconductor |
IGBTs 650V 30A TO-247N Field Stp Trnch IGBT |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65DGC11 | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RGW60TS65DGC11 |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N
Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 5.11 EUR |
| 30+ | 4.82 EUR |
| 50+ | 4.54 EUR |
| 100+ | 4.29 EUR |
| 250+ | 4.09 EUR |
| RGW60TS65DGC11 |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N
Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 8.24 EUR |
| 50+ | 4.6 EUR |
| 100+ | 4.42 EUR |
| RGW60TS65DGC11 |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT TRENCH FS 650V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.5 EUR |
| 30+ | 4.81 EUR |
| 120+ | 3.99 EUR |
| RGW60TS65DGC11 |
|
Hersteller: ROHM Semiconductor
IGBTs 650V 30A TO-247N Field Stp Trnch IGBT
IGBTs 650V 30A TO-247N Field Stp Trnch IGBT
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 8.66 EUR |
| 10+ | 4.91 EUR |
| 100+ | 4.58 EUR |
| RGW60TS65DGC11 |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N
Trans IGBT Chip N-CH 650V 60A 178000mW 3-Pin(3+Tab) TO-247N
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH