RGWS60TS65DGC13 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRNCH FIELD 650V 51A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/91ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 156 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.4 EUR |
| 30+ | 5.94 EUR |
| 120+ | 4.96 EUR |
| 510+ | 4.24 EUR |
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Technische Details RGWS60TS65DGC13 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 51A TO247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247G, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 32ns/91ns, Switching Energy: 500µJ (on), 450µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Current - Collector (Ic) (Max): 51 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 156 W.
Weitere Produktangebote RGWS60TS65DGC13 nach Preis ab 4.47 EUR bis 10.61 EUR
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RGWS60TS65DGC13 | Hersteller : ROHM Semiconductor |
IGBTs TO247 650V 30A TRNCH |
auf Bestellung 2394 Stücke: Lieferzeit 10-14 Tag (e) |
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