RH7G04DBKFRATCB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.7 EUR |
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Technische Details RH7G04DBKFRATCB Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: DFN3333T8LSAB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote RH7G04DBKFRATCB nach Preis ab 0.69 EUR bis 2.66 EUR
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RH7G04DBKFRATCB | Hersteller : Rohm Semiconductor |
Description: NCH 40V 40A, DFN3333T8LSAB, POWE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: DFN3333T8LSAB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RH7G04DBKFRATCB | Hersteller : ROHM Semiconductor |
MOSFETs DFN8 N CHAN 40V |
auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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