RH7L03BBKFRATCB Rohm Semiconductor

Description: NCH 60V 35A, DFN3333T8LSAB, POWE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DFN3333T8LSAB, Vgs(th) (Max) @ Id: 2.5V @ 70µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).