RHK003N06FRAT146 ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET 4V Drive Nch MOSFET (AEC-Q101 Qualified). MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and comple
auf Bestellung 5738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.32 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.17 EUR |
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Technische Details RHK003N06FRAT146 ROHM Semiconductor
Description: MOSFET N-CH 60V 300MA SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V.
Weitere Produktangebote RHK003N06FRAT146
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RHK003N06FRAT146 | Hersteller : ROHM |
Description: ROHM - RHK003N06FRAT146 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 0.7 ohm, SMT, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 200mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.7ohm |
auf Bestellung 2795 Stücke: Lieferzeit 14-21 Tag (e) |
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RHK003N06FRAT146 | Hersteller : ROHM |
Description: ROHM - RHK003N06FRAT146 - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 0.7 ohm, SMT, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 200mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.7ohm |
auf Bestellung 2795 Stücke: Lieferzeit 14-21 Tag (e) |
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| RHK003N06FRAT146 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
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RHK003N06FRAT146 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 300MA SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V |
Produkt ist nicht verfügbar |
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RHK003N06FRAT146 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 300MA SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V |
Produkt ist nicht verfügbar |
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| RHK003N06FRAT146 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |