RHP030N03T100 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.69 EUR |
| 2000+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RHP030N03T100 Rohm Semiconductor
Description: MOSFET N-CH 30V 3A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: MPT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V.
Weitere Produktangebote RHP030N03T100 nach Preis ab 0.59 EUR bis 1.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RHP030N03T100 | Hersteller : ROHM Semiconductor |
MOSFET N-CH 30V 300MA |
auf Bestellung 355 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||
|
|
RHP030N03T100 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 3A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V |
auf Bestellung 2946 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
| RHP030N03T100 |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||
| RHP030N03T100 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 10A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| RHP030N03T100 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 10A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |