RHU003N03FRAT106 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 52+ | 0.4 EUR |
| 72+ | 0.3 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
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Mindestmenge:
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Technische Details RHU003N03FRAT106 Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: UMT3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RHU003N03FRAT106
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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RHU003N03FRAT106 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 300MA UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: UMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
RHU003N03FRAT106 | ROHM Semiconductor |
MOSFETs Nch 30V Vds 0.3A 1.4Rds(on) SOT-323 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RHU003N03FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3 On-state resistance: 2.3Ω Mounting: SMD Pulsed drain current: 1.2A Power dissipation: 0.2W Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: UMT3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RHU003N03FRAT106 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 300MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RHU003N03FRAT106 |
|
Hersteller: ROHM Semiconductor
MOSFETs Nch 30V Vds 0.3A 1.4Rds(on) SOT-323
MOSFETs Nch 30V Vds 0.3A 1.4Rds(on) SOT-323
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RHU003N03FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3
On-state resistance: 2.3Ω
Mounting: SMD
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3
On-state resistance: 2.3Ω
Mounting: SMD
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH