RJ1G08CGNTLL Rohm Semiconductor
auf Bestellung 877 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 2.51 EUR |
| 100+ | 2.31 EUR |
| 250+ | 2.13 EUR |
| 500+ | 1.98 EUR |
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Technische Details RJ1G08CGNTLL Rohm Semiconductor
Description: MOSFET N-CH 40V 80A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V, Power Dissipation (Max): 78W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: LPTL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V.
Weitere Produktangebote RJ1G08CGNTLL nach Preis ab 2.22 EUR bis 3.75 EUR
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RJ1G08CGNTLL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 40V 80A LPTLPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V Power Dissipation (Max): 78W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: LPTL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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RJ1G08CGNTLL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 40V 80A LPTL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V Power Dissipation (Max): 78W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: LPTL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V |
Produkt ist nicht verfügbar |
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RJ1G08CGNTLL | Hersteller : ROHM Semiconductor |
MOSFETs RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package (LPTL), suitable for switching. |
Produkt ist nicht verfügbar |