RJ1G12BGNTLL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 120A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: LPTL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Produktrezensionen
Produktbewertung abgeben
Technische Details RJ1G12BGNTLL Rohm Semiconductor
Description: MOSFET N-CH 40V 120A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: LPTL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V.
Weitere Produktangebote RJ1G12BGNTLL nach Preis ab 4.38 EUR bis 9.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RJ1G12BGNTLL | Rohm Semiconductor |
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) LPTL T/R |
auf Bestellung 926 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
RJ1G12BGNTLL | Rohm Semiconductor |
Description: MOSFET N-CH 40V 120A LPTL Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: LPTL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V |
auf Bestellung 1804 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
RJ1G12BGNTLL | ROHM Semiconductor |
MOSFETs RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. |
auf Bestellung 1166 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RJ1G12BGNTLL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) LPTL T/R
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) LPTL T/R
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.18 EUR |
| 30+ | 5.83 EUR |
| 50+ | 5.49 EUR |
| 100+ | 5.18 EUR |
| 250+ | 4.95 EUR |
| 500+ | 4.74 EUR |
| RJ1G12BGNTLL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 120A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: LPTL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Description: MOSFET N-CH 40V 120A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: LPTL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
auf Bestellung 1804 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.88 EUR |
| 10+ | 7.45 EUR |
| 100+ | 6.02 EUR |
| 500+ | 5.36 EUR |
| RJ1G12BGNTLL |
|
Hersteller: ROHM Semiconductor
MOSFETs RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching.
MOSFETs RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching.
auf Bestellung 1166 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.04 EUR |
| 10+ | 7.44 EUR |
| 25+ | 7.16 EUR |
| 100+ | 5.34 EUR |
| 500+ | 4.44 EUR |
| 1000+ | 4.38 EUR |