RJ1G12BGNTLL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 40V 120A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: LPTL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 3.85 EUR |
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Technische Details RJ1G12BGNTLL Rohm Semiconductor
Description: MOSFET N-CH 40V 120A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: LPTL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V.
Weitere Produktangebote RJ1G12BGNTLL nach Preis ab 3.83 EUR bis 7.6 EUR
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RJ1G12BGNTLL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) LPTL T/R |
auf Bestellung 926 Stücke: Lieferzeit 14-21 Tag (e) |
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RJ1G12BGNTLL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 40V 120A LPTL Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: LPTL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V |
auf Bestellung 1804 Stücke: Lieferzeit 10-14 Tag (e) |
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RJ1G12BGNTLL | Hersteller : ROHM Semiconductor |
MOSFET RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. |
auf Bestellung 1191 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJ1G12BGNTLL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 40V Drain current: 120A On-state resistance: 2.08mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| RJ1G12BGNTLL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 40V Drain current: 120A On-state resistance: 2.08mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |