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RJ1L08CGNTLL

RJ1L08CGNTLL Rohm Semiconductor

rj1l08cgntll-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) LPTL T/R
auf Bestellung 583 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
55+2.87 EUR
57+ 2.66 EUR
100+ 2.47 EUR
250+ 2.31 EUR
500+ 2.15 EUR
Mindestbestellmenge: 55
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Technische Details RJ1L08CGNTLL Rohm Semiconductor

Description: MOSFET N-CH 60V 80A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V, Power Dissipation (Max): 96W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 50µA, Supplier Device Package: LPTL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V.

Weitere Produktangebote RJ1L08CGNTLL nach Preis ab 1.78 EUR bis 4.54 EUR

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RJ1L08CGNTLL RJ1L08CGNTLL Hersteller : ROHM Semiconductor datasheet?p=RJ1L08CGN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.92 EUR
10+ 3.27 EUR
100+ 2.66 EUR
250+ 2.5 EUR
500+ 2.2 EUR
1000+ 1.85 EUR
2000+ 1.78 EUR
RJ1L08CGNTLL RJ1L08CGNTLL Hersteller : Rohm Semiconductor datasheet?p=RJ1L08CGN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 80A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: LPTL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.54 EUR
10+ 4.08 EUR
Mindestbestellmenge: 4
RJ1L08CGNTLL RJ1L08CGNTLL Hersteller : Rohm Semiconductor datasheet?p=RJ1L08CGN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 80A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: LPTL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
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