RJ1L08CGNTLL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 55+ | 3.19 EUR |
| 57+ | 3.02 EUR |
| 100+ | 2.86 EUR |
| 250+ | 2.71 EUR |
| 500+ | 2.59 EUR |
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Technische Details RJ1L08CGNTLL Rohm Semiconductor
Description: MOSFET N-CH 60V 80A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V, Power Dissipation (Max): 96W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 50µA, Supplier Device Package: LPTL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V.
Weitere Produktangebote RJ1L08CGNTLL nach Preis ab 2.12 EUR bis 5.4 EUR
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RJ1L08CGNTLL | ROHM Semiconductor |
 MOSFETs RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package, suitable for switching. |
auf Bestellung 1890 Stücke: Lieferzeit 10-14 Tag (e) |
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RJ1L08CGNTLL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 80A LPTL Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V Power Dissipation (Max): 96W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 50µA Supplier Device Package: LPTL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RJ1L08CGNTLL |
|
Hersteller: ROHM Semiconductor
MOSFETs RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
MOSFETs RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
auf Bestellung 1890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.84 EUR |
| 10+ | 4.05 EUR |
| 100+ | 2.93 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.15 EUR |
| 2000+ | 2.12 EUR |
| RJ1L08CGNTLL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: LPTL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
Description: MOSFET N-CH 60V 80A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: LPTL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.4 EUR |
| 10+ | 4.86 EUR |