RJ1P10BBHTL1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: NCH 100V 105A, TO-263AB, POWER M
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 5.03 EUR |
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Technische Details RJ1P10BBHTL1 Rohm Semiconductor
Description: NCH 100V 105A, TO-263AB, POWER M, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V, Power Dissipation (Max): 189W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-263AB, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 50 V.
Weitere Produktangebote RJ1P10BBHTL1 nach Preis ab 5.44 EUR bis 11.18 EUR
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RJ1P10BBHTL1 | Hersteller : Rohm Semiconductor |
Description: NCH 100V 105A, TO-263AB, POWER M Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Power Dissipation (Max): 189W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 50 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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RJ1P10BBHTL1 | Hersteller : ROHM Semiconductor |
MOSFETs TO263 100V 170A N-CH MOSFET |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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