RJH60D7BDPQ-E0#T2 Renesas
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 5.83 EUR |
| 50+ | 5.08 EUR |
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Technische Details RJH60D7BDPQ-E0#T2 Renesas
Description: IGBT TRENCH 600V 90A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Trench, Td (on/off) @ 25°C: 60ns/180ns, Switching Energy: 700µJ (on), 1.4mJ (off), Test Condition: 300V, 50A, 5Ohm, 15V, Gate Charge: 125 nC, Part Status: Active, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 300 W.
Weitere Produktangebote RJH60D7BDPQ-E0#T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RJH60D7BDPQ-E0#T2 | Hersteller : Renesas Electronics Corporation |
 Description: IGBT TRENCH 600V 90A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: Trench Td (on/off) @ 25°C: 60ns/180ns Switching Energy: 700µJ (on), 1.4mJ (off) Test Condition: 300V, 50A, 5Ohm, 15V Gate Charge: 125 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 300 W |
Produkt ist nicht verfügbar |
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| RJH60D7BDPQ-E0#T2 | Hersteller : Renesas Electronics |
IGBT Transistors IGBT |
Produkt ist nicht verfügbar |