RJH65D27BDPQ-A0#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: IGBT TRENCH 650V 100A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/165ns
Switching Energy: 1mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 175 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 375 W
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Technische Details RJH65D27BDPQ-A0#T2 Renesas Electronics Corporation
Description: IGBT TRENCH 650V 100A TO247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 20ns/165ns, Switching Energy: 1mJ (on), 1.5mJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 175 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 375 W.