RJH65D27BDPQ-A0#T2 Renesas
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Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 14.01 EUR |
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Technische Details RJH65D27BDPQ-A0#T2 Renesas
Description: IGBT TRENCH 650V 100A TO247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 20ns/165ns, Switching Energy: 1mJ (on), 1.5mJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 175 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 375 W.
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RJH65D27BDPQ-A0#T2 | Hersteller : Renesas Electronics Corporation |
 Description: IGBT TRENCH 650V 100A TO247APackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A Supplier Device Package: TO-247A IGBT Type: Trench Td (on/off) @ 25°C: 20ns/165ns Switching Energy: 1mJ (on), 1.5mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 175 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 375 W |
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