RJJ0315DPA-00#J5A Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 35A
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: P-Channel
| Anzahl | Preis |
|---|---|
| 271+ | 1.78 EUR |
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Technische Details RJJ0315DPA-00#J5A Renesas Electronics Corporation
Description: MOSFET P-CH 30V 35A, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-WDFN Exposed Pad, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), FET Type: P-Channel.