
RJK005N03T146 Rohm Semiconductor

Description: MOSFET N-CH 30V 500MA SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.15 EUR |
15000+ | 0.14 EUR |
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Technische Details RJK005N03T146 Rohm Semiconductor
Description: MOSFET N-CH 30V 500MA SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: SMT3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V.
Weitere Produktangebote RJK005N03T146 nach Preis ab 0.19 EUR bis 0.62 EUR
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RJK005N03T146 | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
auf Bestellung 16238 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK005N03T146 |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK005N03T146 | Hersteller : ROHM Semiconductor |
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