RJK0230DPA-00#J5A Renesas Electronics America Inc
Hersteller: Renesas Electronics America Inc
Description: MOSFET 2N-CH 25V 20A/50A 8WPAK
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15W, 35W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 50A
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-WPAK-D
Part Status: Active
Description: MOSFET 2N-CH 25V 20A/50A 8WPAK
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15W, 35W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 50A
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-WPAK-D
Part Status: Active
auf Bestellung 213000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 160+ | 3.13 EUR |
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Technische Details RJK0230DPA-00#J5A Renesas Electronics America Inc
Description: MOSFET 2N-CH 25V 20A/50A 8WPAK, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 15W, 35W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 20A, 50A, Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V, Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, FET Feature: Logic Level Gate, Supplier Device Package: 8-WPAK-D, Part Status: Active.