RJK0328DPB-00#J0 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A LFPAK
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Supplier Device Package: LFPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
Description: MOSFET N-CH 30V 60A LFPAK
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Supplier Device Package: LFPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V
auf Bestellung 11590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 204+ | 2.47 EUR |
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Technische Details RJK0328DPB-00#J0 Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A LFPAK, Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Supplier Device Package: LFPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 10 V.
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auf Bestellung 2765 Stücke: Lieferzeit 21-28 Tag (e) |