Technische Details RJK0346DPA00J0 RENESAS
Description: MOSFET N-CH 30V 65A 8WPAK, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 32.5A, 10V, Power Dissipation (Max): 65W (Tc), Supplier Device Package: 8-WPAK (3), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 10 V.
Weitere Produktangebote RJK0346DPA00J0
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| RJK0346DPA-00-J0 | Hersteller : RENESAS | WPAK 08+ |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK0346DPA-00#J0 | Hersteller : Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 65A 8WPAK Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 32.5A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: 8-WPAK (3) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 10 V |
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