RJK0394DPA-00#J5A Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 30V 35A 8WPAK
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: 8-WPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 10 V
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 1.52 EUR |
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Technische Details RJK0394DPA-00#J5A Renesas Electronics Corporation
Description: MOSFET N-CH 30V 35A 8WPAK, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17.5A, 10V, Power Dissipation (Max): 35W (Tc), Supplier Device Package: 8-WPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 10 V.