RJK03E0DNS-00#J5 Renesas Electronics Corporation

Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V, Power Dissipation (Max): 20W (Tc), Supplier Device Package: 8-HWSON (3.3x3.3), Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 10 V.