auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 352+ | 1.56 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.31 EUR |
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Technische Details RJK03E0DNS-00#J5 Renesas
Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V, Power Dissipation (Max): 20W (Tc), Supplier Device Package: 8-HWSON (3.3x3.3), Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 10 V.
Weitere Produktangebote RJK03E0DNS-00#J5 nach Preis ab 1.31 EUR bis 1.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RJK03E0DNS-00#J5 | Hersteller : Renesas |
 Trans MOSFET N-CH Si 30V 30A 8-Pin HWSON T/R |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RJK03E0DNS-00#J5 | Hersteller : Renesas Electronics Corporation |
Description: POWER FIELD-EFFECT TRANSISTOR Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Power Dissipation (Max): 20W (Tc) Supplier Device Package: 8-HWSON (3.3x3.3) Part Status: Active Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 10 V |
auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK03E0DNS-00-J5 | Hersteller : RENESAS | QFN |
auf Bestellung 4483 Stücke: Lieferzeit 21-28 Tag (e) |