RJK03E1DNS-00#J5 Renesas Electronics Corporation

Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 12.5A, 10V, Power Dissipation (Max): 15W (Tc), Supplier Device Package: 8-HWSON (3.3x3.3), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V.