auf Bestellung 79482 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 304+ | 1.82 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.53 EUR |
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Technische Details RJK03E1DNS-00#J5 Renesas
Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 12.5A, 10V, Power Dissipation (Max): 15W (Tc), Supplier Device Package: 8-HWSON (3.3x3.3), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V.
Weitere Produktangebote RJK03E1DNS-00#J5 nach Preis ab 1.84 EUR bis 1.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RJK03E1DNS-00#J5 | Hersteller : Renesas Electronics Corporation |
 Description: POWER FIELD-EFFECT TRANSISTORPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 12.5A, 10V Power Dissipation (Max): 15W (Tc) Supplier Device Package: 8-HWSON (3.3x3.3) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V |
auf Bestellung 79482 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJK03E1DNS-00#J5 | Hersteller : Renesas Electronics |
Renesas Electronics |
Produkt ist nicht verfügbar |