RJK03M3DPA-00#J5A Renesas Electronics America Inc

Description: MOSFET N-CH 30V 40A 8WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Power Dissipation (Max): 35W (Tc), Supplier Device Package: 8-WPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V.