RJK03M5DNS-00#J5 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 30V 25A 8HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 12.5A, 10V
Power Dissipation (Max): 15W (Tc)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.75 EUR |
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Technische Details RJK03M5DNS-00#J5 Renesas Electronics Corporation
Description: MOSFET N-CH 30V 25A 8HWSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 12.5A, 10V, Power Dissipation (Max): 15W (Tc), Supplier Device Package: 8-HWSON (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V.
Weitere Produktangebote RJK03M5DNS-00#J5 nach Preis ab 0.76 EUR bis 2.89 EUR
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RJK03M5DNS-00#J5 | Hersteller : Renesas Electronics |
MOSFET BEAM2 Series FET, 30V, HWSON3030-8 |
auf Bestellung 4176 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK03M5DNS-00#J5 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 25A 8HWSON Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 12.5A, 10V Power Dissipation (Max): 15W (Tc) Supplier Device Package: 8-HWSON (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V |
auf Bestellung 9786 Stücke: Lieferzeit 10-14 Tag (e) |
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