
RJK0451DPB-00#J5 Renesas Electronics
auf Bestellung 1308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 2.85 EUR |
10+ | 2.38 EUR |
100+ | 1.88 EUR |
250+ | 1.74 EUR |
500+ | 1.59 EUR |
1000+ | 1.36 EUR |
2500+ | 1.29 EUR |
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Technische Details RJK0451DPB-00#J5 Renesas Electronics
Description: MOSFET N-CH 40V 35A LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V, Power Dissipation (Max): 45W (Tc), Supplier Device Package: LFPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V.
Weitere Produktangebote RJK0451DPB-00#J5 nach Preis ab 1.40 EUR bis 4.29 EUR
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RJK0451DPB-00#J5 | Hersteller : Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V Power Dissipation (Max): 45W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V |
auf Bestellung 1754 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0451DPB-00#J5 | Hersteller : Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V Power Dissipation (Max): 45W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V |
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