RJK0603DPN-E0#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 60V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
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Technische Details RJK0603DPN-E0#T2 Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RJK0603DPN-E0#T2 | Hersteller : Renesas Electronics |
MOSFET Power MOSFET |
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