| Anzahl | Preis |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 2.45 EUR |
| 100+ | 2.29 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 2.13 EUR |
| 2500+ | 2.09 EUR |
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Technische Details RJK0656DPB-00#J5 Renesas Electronics
Description: MOSFET N-CH 60V 40A LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote RJK0656DPB-00#J5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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RJK0656DPB-00#J5 | Renesas Electronics Corporation |
 Description: MOSFET N-CH 60V 40A LFPAKInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LFPAK Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RJK0656DPB-00#J5 | Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 40A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RJK0656DPB-00#J5 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 40A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 40A LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RJK0656DPB-00#J5 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Description: MOSFET N-CH 60V 40A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH