RJK1001DPP-A0#T2 Renesas Electronics
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.84 EUR |
| 25+ | 8.59 EUR |
| 100+ | 7.37 EUR |
| 500+ | 6.39 EUR |
| 1000+ | 5.16 EUR |
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Technische Details RJK1001DPP-A0#T2 Renesas Electronics
Description: MOSFET N-CH 100V 80A TO220FPA, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V, Power Dissipation (Max): 30W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220ABA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V.
Weitere Produktangebote RJK1001DPP-A0#T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RJK1001DPP-A0#T2 | Hersteller : Renesas Electronics Corporation |
 Description: MOSFET N-CH 100V 80A TO220FPAPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V Power Dissipation (Max): 30W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220ABA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V |
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