RJK1001DPP-A0#T2 Renesas Electronics

Description: MOSFET N-CH 100V 80A TO220FPA, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220ABA, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 30W (Ta), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole.