RJK1003DPP-A0#T2 Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.43 EUR |
| 10+ | 5.51 EUR |
| 100+ | 4.11 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 3.01 EUR |
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Technische Details RJK1003DPP-A0#T2 Renesas Electronics
Description: MOSFET N-CH 100V 50A TO220FPA, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220ABA, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 25W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote RJK1003DPP-A0#T2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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RJK1003DPP-A0#T2 | Renesas Electronics Corporation |
 Description: MOSFET N-CH 100V 50A TO220FPAInput Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220ABA Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 25W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RJK1003DPP-A0#T2 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 50A TO220FPA
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220ABA
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 25W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 50A TO220FPA
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220ABA
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 25W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH