auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.62 EUR |
| 10+ | 1.34 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.72 EUR |
| 2500+ | 0.68 EUR |
| 5000+ | 0.64 EUR |
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Technische Details RJK1028DNS-00#J5 Renesas Electronics
Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V, Power Dissipation (Max): 10W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HWSON (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +12V, -5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V.
Weitere Produktangebote RJK1028DNS-00#J5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RJK1028DNS-00#J5 | Hersteller : Renesas Electronics Corporation |
 Description: ABU / MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Power Dissipation (Max): 10W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HWSON (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +12V, -5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V |
Produkt ist nicht verfügbar |
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RJK1028DNS-00#J5 | Hersteller : Renesas Electronics Corporation |
Description: ABU / MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Power Dissipation (Max): 10W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HWSON (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +12V, -5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V |
Produkt ist nicht verfügbar |