RJK1052DPB-00#J5 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 100V 20A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
auf Bestellung 4073 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.12 EUR |
| 10+ | 3.42 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.31 EUR |
| 1000+ | 1.96 EUR |
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Technische Details RJK1052DPB-00#J5 Renesas Electronics Corporation
Description: MOSFET N-CH 100V 20A LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 55W (Tc), Supplier Device Package: LFPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V.
Weitere Produktangebote RJK1052DPB-00#J5
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RJK1052DPB-00#J5 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 20A LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V |
Produkt ist nicht verfügbar |
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| RJK1052DPB-00#J5 | Hersteller : Renesas Electronics |
MOSFET JET Series MOSFET, 100V, LFPAK, Pb-F, HF |
Produkt ist nicht verfügbar |