RJK1055DPB-00#J5 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 100V 23A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 2.02 EUR |
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Technische Details RJK1055DPB-00#J5 Renesas Electronics Corporation
Description: MOSFET N-CH 100V 23A LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V.
Weitere Produktangebote RJK1055DPB-00#J5 nach Preis ab 2.04 EUR bis 4.56 EUR
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RJK1055DPB-00#J5 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 23A LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V |
auf Bestellung 6859 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK1055DPB-00#J5 | Hersteller : Renesas Electronics |
MOSFET Power MOSFET |
auf Bestellung 4305 Stücke: Lieferzeit 10-14 Tag (e) |
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