auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.76 EUR |
| 10+ | 5.69 EUR |
| 25+ | 5.36 EUR |
| 100+ | 4.6 EUR |
| 250+ | 4.34 EUR |
| 500+ | 4.08 EUR |
| 1000+ | 3.51 EUR |
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Technische Details RJK2075DPA-00#J5A Renesas Electronics
Description: MOSFET N-CHANNEL 200V 20A WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 69mOhm @ 10A, 10V, Power Dissipation (Max): 65W (Ta), Supplier Device Package: WPAK(3F) (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V.
Weitere Produktangebote RJK2075DPA-00#J5A nach Preis ab 2.21 EUR bis 2.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
| RJK2075DPA-00#J5A | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CHANNEL 200V 20A WPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 10A, 10V Power Dissipation (Max): 65W (Ta) Supplier Device Package: WPAK(3F) (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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