RJK2076DPA-00#J5A

RJK2076DPA-00#J5A Renesas Electronics Corporation


rjk2076dpa-datasheet Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 200V 20A WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: WPAK(3F) (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.67 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details RJK2076DPA-00#J5A Renesas Electronics Corporation

Description: MOSFET N-CH 200V 20A WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V, Power Dissipation (Max): 65W (Tc), Supplier Device Package: WPAK(3F) (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.

Weitere Produktangebote RJK2076DPA-00#J5A nach Preis ab 2.83 EUR bis 5.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RJK2076DPA-00#J5A RJK2076DPA-00#J5A Hersteller : Renesas Electronics RNCCS12755_1-2574739.pdf MOSFET POWER TRANSISTOR SINGLE POWER MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 240-244 Tag (e)
Anzahl Preis ohne MwSt
1+5.46 EUR
10+ 4.58 EUR
25+ 4.33 EUR
100+ 3.71 EUR
250+ 3.5 EUR
500+ 3.31 EUR
1000+ 2.83 EUR