RJK5002DPD-00#J2

RJK5002DPD-00#J2 Renesas Electronics Corporation


rjk5002dpd-datasheet?language=en Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 2.4A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.2A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.88 EUR
6000+ 0.84 EUR
9000+ 0.8 EUR
Mindestbestellmenge: 3000
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Technische Details RJK5002DPD-00#J2 Renesas Electronics Corporation

Description: MOSFET N-CH 500V 2.4A MP3A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 1.2A, 10V, Power Dissipation (Max): 30W (Tc), Supplier Device Package: MP-3A, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V.

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RJK5002DPD-00#J2 Hersteller : Renesas Electronics RNCCS12256_1-2574751.pdf MOSFET Power MOSFET
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