RJK5030DPP-M0#T2 Renesas Electronics
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.87 EUR |
| 25+ | 1.65 EUR |
| 100+ | 1.62 EUR |
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Technische Details RJK5030DPP-M0#T2 Renesas Electronics
Description: MOSFET N-CH 500V 5A TO220FL, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V, Power Dissipation (Max): 28.5W (Tc), Supplier Device Package: TO-220FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.
Weitere Produktangebote RJK5030DPP-M0#T2 nach Preis ab 1.64 EUR bis 3.4 EUR
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RJK5030DPP-M0#T2 | Hersteller : Renesas Electronics Corporation |
 Description: MOSFET N-CH 500V 5A TO220FLPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 28.5W (Tc) Supplier Device Package: TO-220FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
auf Bestellung 1408 Stücke: Lieferzeit 10-14 Tag (e) |
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