
RJK5030DPP-M0#T2 Renesas Electronics Corporation

Description: MOSFET N-CH 500V 5A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 28.5W (Tc)
Supplier Device Package: TO-220FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 1471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
7+ | 2.71 EUR |
25+ | 2.19 EUR |
100+ | 1.80 EUR |
500+ | 1.63 EUR |
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Technische Details RJK5030DPP-M0#T2 Renesas Electronics Corporation
Description: MOSFET N-CH 500V 5A TO220FL, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V, Power Dissipation (Max): 28.5W (Tc), Supplier Device Package: TO-220FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.
Weitere Produktangebote RJK5030DPP-M0#T2 nach Preis ab 1.75 EUR bis 2.82 EUR
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RJK5030DPP-M0#T2 | Hersteller : Renesas Electronics |
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auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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