RJK5030DPP-M0#T2

RJK5030DPP-M0#T2 Renesas Electronics Corporation


rjk5030dpp-m0-datasheet Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 5A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 28.5W (Tc)
Supplier Device Package: TO-220FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 1479 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.98 EUR
25+ 3.2 EUR
100+ 2.63 EUR
500+ 2.23 EUR
1000+ 1.89 EUR
Mindestbestellmenge: 5
Produktrezensionen
Produktbewertung abgeben

Technische Details RJK5030DPP-M0#T2 Renesas Electronics Corporation

Description: MOSFET N-CH 500V 5A TO220FL, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V, Power Dissipation (Max): 28.5W (Tc), Supplier Device Package: TO-220FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.

Weitere Produktangebote RJK5030DPP-M0#T2 nach Preis ab 1.75 EUR bis 4.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RJK5030DPP-M0#T2 RJK5030DPP-M0#T2 Hersteller : Renesas Electronics REN_r07ds0227ej_rjk5030dpp_DST_20101214-2931158.pdf MOSFET MOSFET
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.01 EUR
10+ 3.22 EUR
100+ 2.66 EUR
250+ 2.59 EUR
500+ 2.22 EUR
1000+ 1.8 EUR
5000+ 1.75 EUR