
RJK6006DPP-A0#T2 Renesas Electronics
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 4.56 EUR |
10+ | 4.54 EUR |
25+ | 3.12 EUR |
100+ | 2.82 EUR |
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Technische Details RJK6006DPP-A0#T2 Renesas Electronics
Description: MOSFET N-CH 600V 10A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V, Power Dissipation (Max): 30W (Ta), Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote RJK6006DPP-A0#T2 nach Preis ab 2.74 EUR bis 5.19 EUR
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RJK6006DPP-A0#T2 | Hersteller : Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V Power Dissipation (Max): 30W (Ta) Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 1711 Stücke: Lieferzeit 10-14 Tag (e) |
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