RJK6006DPP-A0#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Ta)
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 1711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.79 EUR |
| 10+ | 4.48 EUR |
| 100+ | 3.18 EUR |
| 500+ | 2.62 EUR |
| 1000+ | 2.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RJK6006DPP-A0#T2 Renesas Electronics Corporation
Description: MOSFET N-CH 600V 10A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V, Power Dissipation (Max): 30W (Ta), Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote RJK6006DPP-A0#T2 nach Preis ab 2.82 EUR bis 6.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RJK6006DPP-A0#T2 | Hersteller : Renesas Electronics |
MOSFETs POWER TRS1 HV-MOS TO220FP MOS AP5H POWER |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
|