RJK6011DJE-00#Z0 Renesas Electronics Corporation

Description: MOSFET N-CH 600V 100MA TO92MOD, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-92MOD, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 52Ohm @ 50mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads, Packaging: Tape & Reel (TR).