RJK6011DJE-00#Z0 Renesas Electronics Corporation


rjk6011dje-data-sheet-600v-01a-mos-fet-high-speed-power-switching Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 100MA TO92MOD
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 52Ohm @ 50mA, 10V
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
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Technische Details RJK6011DJE-00#Z0 Renesas Electronics Corporation

Description: MOSFET N-CH 600V 100MA TO92MOD, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 52Ohm @ 50mA, 10V, Power Dissipation (Max): 900mW (Ta), Supplier Device Package: TO-92MOD, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V.

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RJK6011DJE-00#Z0 RJK6011DJE-00#Z0 Hersteller : Renesas Electronics r07ds1153ej0400_rjk6011dje-1093168.pdf MOSFET MOSFET
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