RJK6011DP3-A0#J2 Renesas
Hersteller: Renesas
Description: RJK6011DP3-A0#J2 - SILICON NCH S
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Description: RJK6011DP3-A0#J2 - SILICON NCH S
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 1.82 EUR |
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Technische Details RJK6011DP3-A0#J2 Renesas
Description: RJK6011DP3-A0#J2 - SILICON NCH S, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drain to Source Voltage (Vdss): 600 V.