RJK6015DPM-00#T1 Renesas Electronics Corporation

Description: MOSFET N-CH 600V 21A TO3PFM, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Supplier Device Package: TO-3PFM, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active.