RJK6025DPD-00#J2

RJK6025DPD-00#J2 Renesas Electronics Corporation


rjk6025dpd-datasheet?language=en Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 1A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
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Technische Details RJK6025DPD-00#J2 Renesas Electronics Corporation

Description: MOSFET N-CH 600V 1A MP3A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V, Power Dissipation (Max): 29.7W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: MP-3A, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V.

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RJK6025DPD-00#J2 RJK6025DPD-00#J2 Hersteller : Renesas Electronics Corporation rjk6025dpd-datasheet?language=en Description: MOSFET N-CH 600V 1A MP3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
Produkt ist nicht verfügbar
RJK6025DPD-00#J2 RJK6025DPD-00#J2 Hersteller : Renesas Electronics r07ds0676ej0100_rjk6025dpd-1093062.pdf MOSFET MOSFET, 600V
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