RJK60S5DPP-E0#T2

RJK60S5DPP-E0#T2 Renesas Electronics Corporation


RNCCS18815-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Power Dissipation (Max): 33.7W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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Lieferzeit 10-14 Tag (e)
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Technische Details RJK60S5DPP-E0#T2 Renesas Electronics Corporation

Description: MOSFET N-CH 600V 20A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V, Power Dissipation (Max): 33.7W (Tc), Supplier Device Package: TO-220FP, Part Status: Obsolete, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.