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RJL5014DPP-E0#T2

RJL5014DPP-E0#T2 Renesas


Hersteller: Renesas
Description: RJL5014DPP-E0#T2 - SILICON N CHA
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
49+10.11 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RJL5014DPP-E0#T2 Renesas

Description: RJL5014DPP-E0#T2 - SILICON N CHA, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.