RJL6018DPK-00#T0 Renesas
Hersteller: Renesas
TO-3/600V - 27A - MOS FET High Speed Power Switching RJL6018
Anzahl je Verpackung: 1 Stücke
TO-3/600V - 27A - MOS FET High Speed Power Switching RJL6018
Anzahl je Verpackung: 1 Stücke
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Technische Details RJL6018DPK-00#T0 Renesas
Description: MOSFET N-CH 600V 27A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V, Power Dissipation (Max): 200W (Tc), Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V.
Weitere Produktangebote RJL6018DPK-00#T0
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RJL6018DPK-00#T0 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 27A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V |
Produkt ist nicht verfügbar |
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| RJL6018DPK-00#T0 | Hersteller : Renesas Electronics |
 MOSFET 600V 27A MOSFET RDS(on)=0.22ohm typ |
Produkt ist nicht verfügbar |