RJL6018DPK-00#T0 Renesas
Hersteller: Renesas
TO-3/600V - 27A - MOS FET High Speed Power Switching RJL6018
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Technische Details RJL6018DPK-00#T0 Renesas
Description: MOSFET N-CH 600V 27A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3P, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote RJL6018DPK-00#T0
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| RJL6018DPK-00#T0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 27A TO3P Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3P Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RJL6018DPK-00#T0 | Renesas Electronics |
 MOSFET 600V 27A MOSFET RDS(on)=0.22ohm typ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RJL6018DPK-00#T0 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 27A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 600V 27A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RJL6018DPK-00#T0 |
|
Hersteller: Renesas Electronics
MOSFET 600V 27A MOSFET RDS(on)=0.22ohm typ
MOSFET 600V 27A MOSFET RDS(on)=0.22ohm typ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH