RJM0306JSP-01#J0 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N/2P-CH 30V 3.5A 8SOP
Supplier Device Package: 8-SOP
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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Technische Details RJM0306JSP-01#J0 Renesas Electronics Corporation
Description: MOSFET 2N/2P-CH 30V 3.5A 8SOP, Supplier Device Package: 8-SOP, FET Feature: Logic Level Gate, 4V Drive, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2.2W, Technology: MOSFET (Metal Oxide), Configuration: 2 N and 2 P-Channel (Full Bridge), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.