RJP60F4DPM-00#T1

RJP60F4DPM-00#T1 Renesas Electronics America Inc


rjp60f4dpm-datasheet Hersteller: Renesas Electronics America Inc
Description: IGBT 600V 60A 41.2W TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/70ns
Test Condition: 400V, 30A, 5Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 41.2 W
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.94 EUR
10+ 7.51 EUR
Mindestbestellmenge: 2
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Technische Details RJP60F4DPM-00#T1 Renesas Electronics America Inc

Description: IGBT 600V 60A 41.2W TO-3PFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A, Supplier Device Package: TO-3PFM, IGBT Type: Trench, Td (on/off) @ 25°C: 45ns/70ns, Test Condition: 400V, 30A, 5Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 41.2 W.

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RJP60F4DPM-00#T1 Hersteller : Renesas Electronics REN_r07ds0586ej0100_rjp60f4dpm_DST_20111125-1999346.pdf IGBT Transistors Power Module - Lead Free
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