RJP65T43DPM-00#T1 Renesas Electronics

Description: IGBT TRENCH 650V 40A TO-3PFM, Power - Max: 68.8 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 40 A, Part Status: Active, Gate Charge: 70 nC, Test Condition: 400V, 20A, 10Ohm, 15V, Switching Energy: 170µJ (on), 110µJ (off), Td (on/off) @ 25°C: 30ns/107ns, IGBT Type: Trench, Supplier Device Package: TO-3PFM, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.