auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.66 EUR |
| 10+ | 7.71 EUR |
| 30+ | 6.53 EUR |
| 120+ | 5.86 EUR |
| 270+ | 5.54 EUR |
| 510+ | 4.21 EUR |
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Technische Details RJP65T43DPM-00#T1 Renesas Electronics
Description: IGBT TRENCH 650V 40A TO3PFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Supplier Device Package: TO-3PFM, IGBT Type: Trench, Td (on/off) @ 25°C: 30ns/107ns, Switching Energy: 170µJ (on), 110µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 68.8 W.
Weitere Produktangebote RJP65T43DPM-00#T1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RJP65T43DPM-00#T1 | Hersteller : Renesas Electronics Corporation |
 Description: IGBT TRENCH 650V 40A TO3PFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Td (on/off) @ 25°C: 30ns/107ns Switching Energy: 170µJ (on), 110µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 68.8 W |
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