RJP65T54DPM-E0#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 60A TO-3PF
Power - Max: 63.5 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 72 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 330µJ (on), 760µJ (off)
Td (on/off) @ 25°C: 35ns/120ns
Supplier Device Package: TO-3PF
IGBT Type: Trench
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
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Technische Details RJP65T54DPM-E0#T2 Renesas Electronics Corporation
Description: IGBT TRENCH 650V 60A TO-3PF, Power - Max: 63.5 W, Current - Collector Pulsed (Icm): 225 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Gate Charge: 72 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 330µJ (on), 760µJ (off), Td (on/off) @ 25°C: 35ns/120ns, Supplier Device Package: TO-3PF, IGBT Type: Trench, Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3PFM, SC-93-3, Packaging: Tube.