RJU3052SDPD-E0#J2 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: DIODE GEN PURP 360V 20A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 360 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 360 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details RJU3052SDPD-E0#J2 Renesas Electronics Corporation
Description: DIODE GEN PURP 360V 20A TO252, Current - Reverse Leakage @ Vr: 1 µA @ 360 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 360 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-252, Current - Average Rectified (Io): 20A, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).