RM 4C Sanken Electric USA Inc.
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 3A AXIAL
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
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Technische Details RM 4C Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 3A AXIAL, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: Axial, Packaging: Bulk, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 970 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 1000 V.